Integrated Circuits

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Features • Compatible with MCS®-51Products • 2K Bytes of Reprogrammable Flash Memory– Endurance: 10,000 Write/Erase Cycles • 2.7V to 6V Operating Range • Fully Static Operation: 0 Hz to 24 MHz • Two-level Program Memory Lock • 128 x 8-bit Internal RAM • 15 Programmable I/O Lines • Two 16-bit Timer/Counters • Six Interrupt Sources • Programmable Serial UART Channel • Direct LED Drive Outputs • On-chip Analog Comparator • Low-power Idle and Power-down Modes • Green (Pb/Halide-free) Packaging Option

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■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES « VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION

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8.0 V to 35 V Operation • 5.1 V
1.0% Trimmed Reference • 100 Hz to 400 kHz Oscillator Range • Separate Oscillator Sync Pin • Adjustable Deadtime Control • Input Undervoltage Lockout • Latching PWM to Prevent Multiple Pulses • Pulse−by−Pulse Shutdown • Dual Source/Sink Outputs:
400 mA Peak • Pb−Free Packages are Available

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Core: ARM® 32-bit Cortex™-M0 CPU, frequency up to 48 MHz  Memories – 16 to 64 Kbytes of Flash memory – 4 to 8 Kbytes of SRAM with HW parity checking  CRC calculation unit  Reset and power management – Voltage range: 2.4 V to 3.6 V – Power-on/Power down reset (POR/PDR) – Low power modes: Sleep, Stop, Standby  Clock management – 4 to 32 MHz crystal oscillator – 32 kHz oscillator for RTC with calibration – Internal 8 MHz RC with x6 PLL option – Internal 40 kHz RC oscillator  Up to 55 fast I/Os

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he ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage, high-current Darlington transistor arrays. Each consists of seven npn Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of a single Darlington pair is 500 mA. The Darlington pairs can be paralleled for higher current capability. Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. For 100-V (otherwise interchangeable) versions of the ULN2003A and ULN2004A, see the SN75468 and SN75469, respectively.

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Features • Very High Speed – 10 MBit/s • Superior CMR – 10 kV/s • Double working voltage − 480 V • Fan−out of 8 Over −40°C to +85°C • Logic Gate Output • Strobable Output • Wired OR−open Collector • U.L. Recognized (File # E90700)

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■ STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP125, TIP126 and TIP127, respectively

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DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP125, TIP126 and TIP127, respectively

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Description: M57962L is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate amplifier application. This device operates as an isolation amplifier for these modules and provides the required electrical isolation between the input and output with an opto-coupler. Short circuit protection is provided by a built in desaturation detector. A fault signal is provided if the short circuit protection is activated.

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1. Transistor Type: NPN (Silicon)

2. Package: TO-39 (Metal Can) or TO-5

3. Maximum Ratings:

   • Collector-Emitter Voltage (V_CEO): 150V

   • Collector-Base Voltage (V_CB): 160V

   • Emitter-Base Voltage (V_EB): 5V

   • Collector Current (I_C): 1A (continuous)

   • Power Dissipation (P_D): 10W (at 25°C case temperature)

4. Electrical Characteristics:

   • DC Current Gain (h_FE): 20–70 (at I_C = 500mA)

   • Transition Frequency (f_T): ~10MHz

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Possible Specifications for M57729DL (Estimated)

1. Type: High-Frequency Power Amplifier Module (common in RF applications)

2. Package: Likely a SIP (Single In-line Package) or hybrid module

3. Operating Voltage: ~12V–28V (typical for RF amplifiers)

4. Frequency Range:

   • UHF Band (e.g., 400–500 MHz)

   • Or VHF Band (e.g., 100–250 MHz)

5. Output Power: ~10W–25W (depending on design)

6. Gain: ~10–15 dB (typical for such modules)

7. Applications:

   • RF transmitters

   • Two-way radios

   • Amateur radio equipment

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High-Performance RISC CPU: • C Compiler Optimized Architecture: - Optional extended instruction set designed to optimize re-entrant code • Up to 1024 Bytes Data EEPROM • Up to 64 Kbytes Linear Program Memory Addressing • Up to 3896 Bytes Linear Data Memory Addressing • Up to 16 MIPS Operation • 16-bit Wide Instructions, 8-bit Wide Data Path • Priority Levels for Interrupts • 31-Level, Software Accessible Hardware Stack • 8 x 8 Single-Cycle Hardware Multiplier

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• Modified Harvard architecture • C compiler optimized instruction set architecture with flexible addressing modes • 83 base instructions • 24-bit wide instructions, 16-bit wide data path • 24 Kbytes on-chip Flash program space (8K Instruction words) • 1 Kbyte of on-chip data RAM • 1 Kbyte of nonvolatile data EEPROM • 16 x 16-bit working register array • Up to 30 MIPs operation: - DC to 40 MHz external clock input - 4 MHz-10 MHz oscillator input with PLL active (4x, 8x, 16x) • 29 interrupt sources - 3 external interrupt sources - 8 user-selectable priority levels for each interrupt source - 4 processor trap sources

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• Phase A, Phase B and Index Pulse Input • 16-bit Up/Down Position Counter • Count Direction Status • Position Measurement (x2 and x4) mode • Programmable Digital Noise Filters on Inputs • Alternate 16-bit Timer/Counter mode • Interrupt on Position Counter Rollover/Underflow 

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Planar passivated four quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C). It is used in applications where "high junction operating temperature capability" is required

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BTA40-600B
BTA40-600B STMICROELECTRONICS BTA- 40/600B Triac, 40A, 125 Degree C

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Brand: CHINA MAKE ; Product Code: 33E 50W ; Availability: 3 ; PART NO, 33E 50W ; DESCRIPTION, Generic 50 Watt 33 Ohm 5% Green Aluminum Shell Wire Wound Resistor.

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